UNR221M00L
TRANS PREBIAS NPN 50V 0.1A MINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
Panasonic Electronic Components UNR221M00L is an NPN pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This device features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It offers a transition frequency of 150MHz and a maximum power dissipation of 200mW. The internal base resistors are R1 at 2.2 kOhms and R2 at 47 kOhms, contributing to its pre-biased functionality. The DC current gain (hFE) is a minimum of 80 at 5mA collector current and 10V collector-emitter voltage. Saturation voltage (Vce Sat) is held to a maximum of 250mV at 300µA base current and 10mA collector current. The UNR221M00L is supplied in a Mini3-G1 package, equivalent to TO-236-3, SC-59, or SOT-23-3, and is available on tape and reel. This component is commonly utilized in industrial and consumer electronics for switching and amplification circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | Mini3-G1 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
Request a Quote
Clients Also Buy
UNR212400L
TRANS PREBIAS PNP 50V 0.5A MINI3
DRA9143Y0L
TRANS PREBIAS PNP 50V SSMINI3
UNR32AEG0L
TRANS PREBIAS NPN 50V SSSMINI3
