UNR221K00L
TRANS PREBIAS NPN 50V 0.1A MINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR221K00L is an NPN pre-biased bipolar junction transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The integrated base resistor (R1) is 10 kOhms and the emitter-base resistor (R2) is 4.7 kOhms, providing a minimum DC current gain (hFE) of 20 at 5mA collector current and 10V Vce. With a transition frequency of 150 MHz and a maximum power dissipation of 200 mW, this transistor is suitable for use in consumer electronics and industrial automation. The device is supplied in a Mini3-G1 package, equivalent to TO-236-3, SC-59, or SOT-23-3, and is available on tape and reel. Saturation voltage is specified at 250mV maximum for 300µA base current and 10mA collector current. Collector cutoff current is a maximum of 500nA.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5mA, 10V |
| Supplier Device Package | Mini3-G1 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |