UNR221E00L
TRANS PREBIAS NPN 50V 0.1A MINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR221E00L is a pre-biased NPN bipolar transistor designed for surface mount applications. This component features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 150MHz and a power dissipation of 200mW, it is suitable for general-purpose switching and amplification tasks. The integrated base resistor (R1) is 47 kOhms and the emitter base resistor (R2) is 22 kOhms, providing a high DC current gain (hFE) of at least 60 at 5mA and 10V. The transistor type is NPN pre-biased, and it is supplied in a Mini3-G1 package (TO-236-3, SC-59, SOT-23-3) on tape and reel. The UNR221E00L is commonly found in consumer electronics and industrial automation.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
| Supplier Device Package | Mini3-G1 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
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