UNR221D00L
TRANS PREBIAS NPN 50V 0.1A MINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR221D00L is an NPN pre-biased bipolar transistor. This device features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 150MHz and a power dissipation of 200mW, it is suited for applications requiring minimal external biasing components. The internal base resistors are specified as R1 = 47 kOhms and R2 = 10 kOhms, providing a minimum DC current gain (hFE) of 30 at 5mA collector current and 10V Vce. The transistor is provided in a Mini3-G1 surface mount package, specifically TO-236-3, SC-59, SOT-23-3, and is supplied on tape and reel. Applications include general-purpose amplification and switching circuits in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 10V |
| Supplier Device Package | Mini3-G1 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |