UNR221100L
TRANS PREBIAS NPN 50V 0.1A MINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
Panasonic Electronic Components UNR221100L is an NPN pre-biased bipolar junction transistor (BJT) designed for surface-mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The transistor exhibits a transition frequency of 150MHz and a maximum power dissipation of 200mW. It is supplied in the Mini3-G1 package, equivalent to TO-236-3, SC-59, or SOT-23-3, and is provided on Tape & Reel. The internal base resistance (R1) is 10 kOhms and the emitter base resistance (R2) is 10 kOhms, resulting in a minimum DC current gain (hFE) of 35 at 5mA and 10V. Collector emitter saturation voltage is a maximum of 250mV at 300µA base current and 10mA collector current. This device is suitable for applications in industrial and consumer electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | NPN - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 @ 5mA, 10V |
| Supplier Device Package | Mini3-G1 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
Request a Quote
Clients Also Buy
UNR212400L
TRANS PREBIAS PNP 50V 0.5A MINI3
UNR911FG0L
TRANS PREBIAS PNP 50V SSMINI3
DRA9143Y0L
TRANS PREBIAS PNP 50V SSMINI3