UNR212X00L
TRANS PREBIAS PNP 50V 0.5A MINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR212X00L. This PNP Pre-Biased Bipolar Transistor (BJT) features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 500 mA. With a transition frequency of 200 MHz and a maximum power dissipation of 200 mW, this device is suited for applications requiring compact switching and amplification. It integrates base resistors, with R1 specified at 270 Ohms and R2 at 5 kOhms, facilitating simplified circuit design. The minimum DC current gain (hFE) is 20 at 5 mA and 10 V. The UNR212X00L is supplied in a Mini3-G1 package, a TO-236-3, SC-59, SOT-23-3 equivalent, for surface mounting. It is available in Tape & Reel (TR) packaging. Typical applications include consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 20 @ 5mA, 10V |
| Supplier Device Package | Mini3-G1 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 270 Ohms |
| Resistor - Emitter Base (R2) | 5 kOhms |
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