UNR212300L
TRANS PREBIAS PNP 50V 0.5A MINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR212300L is a PNP - Pre-Biased Bipolar Transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 500 mA. The pre-bias configuration includes a base resistor (R1) of 10 kOhms and an emitter base resistor (R2) of 10 kOhms, simplifying circuit design. With a transition frequency of 200 MHz and a maximum power dissipation of 200 mW, it offers a minimum DC current gain (hFE) of 60 at 5 mA collector current and 10 V Vce. The transistor exhibits a Vce saturation of 250 mV at 5 mA base current and 100 mA collector current. Packaged in a Mini3-G1 (TO-236-3, SC-59, SOT-23-3) form factor and supplied on tape and reel, this device is suitable for use in various industrial and consumer electronics applications.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
| Supplier Device Package | Mini3-G1 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 10 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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