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UNR212300L

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UNR212300L

TRANS PREBIAS PNP 50V 0.5A MINI3

Manufacturer: Panasonic Electronic Components

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

Panasonic Electronic Components UNR212300L is a PNP - Pre-Biased Bipolar Transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50 V and a maximum collector current of 500 mA. The pre-bias configuration includes a base resistor (R1) of 10 kOhms and an emitter base resistor (R2) of 10 kOhms, simplifying circuit design. With a transition frequency of 200 MHz and a maximum power dissipation of 200 mW, it offers a minimum DC current gain (hFE) of 60 at 5 mA collector current and 10 V Vce. The transistor exhibits a Vce saturation of 250 mV at 5 mA base current and 100 mA collector current. Packaged in a Mini3-G1 (TO-236-3, SC-59, SOT-23-3) form factor and supplied on tape and reel, this device is suitable for use in various industrial and consumer electronics applications.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic250mV @ 5mA, 100mA
Current - Collector Cutoff (Max)1µA
DC Current Gain (hFE) (Min) @ Ic, Vce60 @ 5mA, 10V
Supplier Device PackageMini3-G1
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max200 mW
Frequency - Transition200 MHz
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)10 kOhms

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