UNR212200L
TRANS PREBIAS PNP 50V 0.5A MINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR212200L is a pre-biased PNP bipolar transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 500mA. With a transition frequency of 200MHz and a power dissipation of 200mW, it is suitable for high-frequency switching and amplification tasks. The internal base resistor (R1) is 4.7 kOhms and the emitter base resistor (R2) is 4.7 kOhms, providing a pre-biased configuration for simplified circuit design. The DC current gain (hFE) is a minimum of 50 at 5mA collector current and 10V Vce. The transistor is supplied in a Mini3-G1 package, also known as TO-236-3 or SC-59, and is available on tape and reel. This device finds application in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 5mA, 100mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 50 @ 5mA, 10V |
| Supplier Device Package | Mini3-G1 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 200 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 4.7 kOhms |
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