UNR211V00L
TRANS PREBIAS PNP 50V 0.1A MINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR211V00L is a PNP pre-biased bipolar transistor designed for surface mount applications. This component features a Collector-Emitter Breakdown Voltage of 50V and a maximum Collector Current (Ic) of 100mA. The transition frequency is rated at 80 MHz, with a maximum power dissipation of 200 mW. It is supplied in the Mini3-G1 package, equivalent to TO-236-3, SC-59, or SOT-23-3, and offered on tape and reel. The integrated base resistors (R1 and R2) are both specified at 2.2 kOhms, simplifying circuit design. Key performance characteristics include a minimum DC Current Gain (hFE) of 6 at 5mA/10V and a Vce Saturation of 250mV at 1.5mA/10mA. This transistor is suitable for use in industrial automation and consumer electronics.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 1.5mA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 6 @ 5mA, 10V |
| Supplier Device Package | Mini3-G1 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 80 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 2.2 kOhms |
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