UNR211N00L
TRANS PREBIAS PNP 50V 0.1A MINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR211N00L is a PNP Pre-Biased Bipolar Junction Transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The device offers a transition frequency of 80MHz and a maximum power dissipation of 200mW. Internal base resistors of 4.7 kOhms (R1) and 47 kOhms (R2) are integrated, simplifying circuit design. The transistor type is PNP, pre-biased, with a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V Vce. Saturation voltage (Vce Sat) is a maximum of 250mV at 300µA base current and 10mA collector current. The collector cutoff current is a maximum of 500nA. It is supplied in a Mini3-G1 package, also known as TO-236-3, SC-59, or SOT-23-3, and is available on tape and reel. This component is commonly utilized in industrial automation, consumer electronics, and communication systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | Mini3-G1 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 80 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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