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UNR211M00L

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UNR211M00L

TRANS PREBIAS PNP 50V 0.1A MINI3

Manufacturer: Panasonic Electronic Components

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

Panasonic Electronic Components UNR211M00L is a PNP pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The integrated base resistors, R1 at 2.2 kOhms and R2 at 47 kOhms, simplify circuit design by eliminating the need for external biasing components. With a transition frequency of 80 MHz and a maximum power dissipation of 200mW, this transistor is suitable for switching and amplification tasks. The DC collector current gain (hFE) is a minimum of 80 at 5mA collector current and 10V Vce. The device is supplied in a Mini3-G1 package (TO-236-3, SC-59, SOT-23-3) and is available on a tape and reel. Applications include digital logic circuits and general switching functions in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce80 @ 5mA, 10V
Supplier Device PackageMini3-G1
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max200 mW
Frequency - Transition80 MHz
Resistor - Base (R1)2.2 kOhms
Resistor - Emitter Base (R2)47 kOhms

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