UNR211M00L
TRANS PREBIAS PNP 50V 0.1A MINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR211M00L is a PNP pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The integrated base resistors, R1 at 2.2 kOhms and R2 at 47 kOhms, simplify circuit design by eliminating the need for external biasing components. With a transition frequency of 80 MHz and a maximum power dissipation of 200mW, this transistor is suitable for switching and amplification tasks. The DC collector current gain (hFE) is a minimum of 80 at 5mA collector current and 10V Vce. The device is supplied in a Mini3-G1 package (TO-236-3, SC-59, SOT-23-3) and is available on a tape and reel. Applications include digital logic circuits and general switching functions in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | Mini3-G1 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 80 MHz |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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