UNR211F00L
TRANS PREBIAS PNP 50V 0.1A MINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR211F00L is a PNP pre-biased bipolar transistor. This device features a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 150MHz and a power dissipation of 200mW, it is suitable for applications requiring low-power switching and amplification. The integrated base resistors include R1 at 4.7 kOhms and R2 at 10 kOhms, facilitating simplified circuit design. The transistor exhibits a minimum DC current gain (hFE) of 30 at 5mA collector current and 10V collector-emitter voltage. Saturation voltage is specified at a maximum of 250mV at 300µA base current and 10mA collector current. This component is provided in a Mini3-G1 surface mount package, specifically the TO-236-3, SC-59, or SOT-23-3, supplied on tape and reel. It finds application in industrial automation, consumer electronics, and communication systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 30 @ 5mA, 10V |
| Supplier Device Package | Mini3-G1 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 150 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 10 kOhms |
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