UNR211600L
TRANS PREBIAS PNP 50V 0.1A MINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR211600L is a PNP pre-biased bipolar junction transistor. This component offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It features a guaranteed DC current gain (hFE) of 160 at 5mA collector current and 10V collector-emitter voltage. The transition frequency is specified at 80MHz. Integrated base resistance (R1) is 4.7 kOhms. The device is rated for a maximum power dissipation of 200mW. It is supplied in a Mini3-G1 package, suitable for surface mounting. Typical applications include switching and amplification circuits within the automotive and industrial automation sectors. The UNR211600L is delivered on tape and reel.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Supplier Device Package | Mini3-G1 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 80 MHz |
| Resistor - Base (R1) | 4.7 kOhms |
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