UNR211300L
TRANS PREBIAS PNP 50V 0.1A MINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components UNR211300L is a PNP bipolar transistor featuring integrated base resistors for simplified circuit design. This pre-biased device offers a 50V collector-emitter breakdown voltage and a maximum collector current of 100mA. With a transition frequency of 80MHz and power dissipation of 200mW, it is suitable for applications requiring low power switching and amplification. The internal base resistors, R1 and R2, are specified at 47 kOhms each, contributing to a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V Vce. The transistor exhibits a Vce saturation of 250mV at 300µA base current and 10mA collector current. Packaged in a Mini3-G1 (TO-236-3, SC-59, SOT-23-3) surface mount configuration and supplied on tape and reel, this component is commonly utilized in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 300µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | Mini3-G1 |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Frequency - Transition | 80 MHz |
| Resistor - Base (R1) | 47 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
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