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UNR211100L

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UNR211100L

TRANS PREBIAS PNP 50V 0.1A MINI3

Manufacturer: Panasonic Electronic Components

Categories: Single, Pre-Biased Bipolar Transistors

Quality Control: Learn More

Panasonic Electronic Components UNR211100L is a PNP pre-biased bipolar transistor designed for surface mount applications. This component features a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. The transition frequency is 80MHz with a maximum power dissipation of 200mW. It is supplied in a Mini3-G1 package, specifically the TO-236-3, SC-59, SOT-23-3 footprint, on a tape and reel. The internal base resistor (R1) is 10 kOhms and the emitter base resistor (R2) is 10 kOhms. The device exhibits a minimum DC current gain (hFE) of 35 at 5mA collector current and 10V Vce. This transistor is suitable for use in consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-236-3, SC-59, SOT-23-3
Mounting TypeSurface Mount
Transistor TypePNP - Pre-Biased
Vce Saturation (Max) @ Ib, Ic250mV @ 300µA, 10mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce35 @ 5mA, 10V
Supplier Device PackageMini3-G1
Current - Collector (Ic) (Max)100 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max200 mW
Frequency - Transition80 MHz
Resistor - Base (R1)10 kOhms
Resistor - Emitter Base (R2)10 kOhms

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