DRA9124X0L
TRANS PREBIAS PNP 50V SSMINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
Quality Control: Learn More
Panasonic Electronic Components DRA9124X0L is a PNP pre-biased bipolar junction transistor (BJT) designed for surface mount applications. This component, packaged in an SSMini3-F3-B (SC-89, SOT-490), offers a collector-emitter breakdown voltage of 50V and a maximum collector current of 100mA. It features integrated base resistors (R1: 22 kOhms, R2: 47 kOhms) for simplified circuit design. The transistor exhibits a minimum DC current gain (hFE) of 80 at 5mA collector current and 10V Vce. With a maximum power dissipation of 125mW and a Vce saturation of 250mV at 500µA base current and 10mA collector current, the DRA9124X0L is suitable for various signal switching and amplification tasks across industrial, consumer electronics, and communication systems. The device is supplied in tape and reel packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-89, SOT-490 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 80 @ 5mA, 10V |
| Supplier Device Package | SSMini3-F3-B |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 125 mW |
| Resistor - Base (R1) | 22 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
Request a Quote
Clients Also Buy
UNR52A0G0L
TRANS PREBIAS NPN 50V SMINI3
DRC2144T0L
TRANS PREBIAS NPN 50V 0.1A MINI3
DRC2123J0L
TRANS PREBIAS NPN 50V 0.1A MINI3
