DRA3143Y0L
TRANS PREBIAS PNP 50V SSSMINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components PNP Pre-Biased Bipolar Transistor, DRA3143Y0L. This SSSMini3-F2-B surface mount device features a 50 V collector-emitter breakdown voltage and a maximum collector current of 100 mA. The pre-biased configuration includes a base resistor (R1) of 4.7 kOhms and an emitter-base resistor (R2) of 22 kOhms, facilitating simplified circuit design. It offers a minimum DC current gain (hFE) of 60 at 5 mA and 10 V. The transistor dissipates a maximum power of 100 mW and has a collector cutoff current of 500 nA. Vce saturation is 250 mV at 500 µA base current and 10 mA collector current. This component is suitable for applications in consumer electronics and industrial automation. Packaged in Tape & Reel (TR).
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SOT-723 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 60 @ 5mA, 10V |
| Supplier Device Package | SSSMini3-F2-B |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 100 mW |
| Resistor - Base (R1) | 4.7 kOhms |
| Resistor - Emitter Base (R2) | 22 kOhms |
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