DRA2115T0L
TRANS PREBIAS PNP 50V 0.1A MINI3Manufacturer: Panasonic Electronic Components
Categories: Single, Pre-Biased Bipolar Transistors
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Panasonic Electronic Components DRA2115T0L is a PNP pre-biased bipolar junction transistor. This surface mount component, housed in a MINI3-G3-B package (equivalent to TO-236-3, SC-59, SOT-23-3), offers a collector-emitter breakdown voltage of 50 V and a maximum collector current of 100 mA. It features an integrated base resistor (R1) of 100 kOhms, simplifying circuit design. The transistor exhibits a minimum DC current gain (hFE) of 160 at 5 mA collector current and 10 V Vce, with a Vce saturation of 250 mV at 500 µA base current and 10 mA collector current. With a maximum power dissipation of 200 mW, this component is suitable for applications in consumer electronics and industrial control systems. It is supplied in Tape & Reel (TR) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Mounting Type | Surface Mount |
| Transistor Type | PNP - Pre-Biased |
| Vce Saturation (Max) @ Ib, Ic | 250mV @ 500µA, 10mA |
| Current - Collector Cutoff (Max) | 500nA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 160 @ 5mA, 10V |
| Supplier Device Package | MINI3-G3-B |
| Current - Collector (Ic) (Max) | 100 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 200 mW |
| Resistor - Base (R1) | 100 kOhms |
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