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XN0NE9200L

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XN0NE9200L

MOSFET P-CH 12V 1.2A MINI5-G1

Manufacturer: Panasonic Electronic Components

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Panasonic Electronic Components XN0NE9200L is a P-Channel MOSFET designed for surface mount applications. This component features a 12V drain-to-source voltage (Vdss) and a continuous drain current (Id) capability of 1.2A at 25°C. The Rds On is specified at a maximum of 450mOhm when driven at 800mA with a 4V gate-source voltage (Vgs). With a maximum power dissipation of 600mW (Ta), it is suited for moderate power handling. The device includes an integrated Schottky diode for enhanced performance. Packaged in a Mini5-G1 (SC-74A, SOT-753) configuration, it is supplied on tape and reel. This MOSFET is utilized in various electronic systems requiring efficient switching and power control. The threshold voltage (Vgs(th)) is a maximum of 1.3V at 1mA, with a maximum gate-source voltage tolerance of ±15V.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-74A, SOT-753
Mounting TypeSurface Mount
Operating Temperature125°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C1.2A (Ta)
Rds On (Max) @ Id, Vgs450mOhm @ 800mA, 4V
FET FeatureSchottky Diode (Isolated)
Power Dissipation (Max)600mW (Ta)
Vgs(th) (Max) @ Id1.3V @ 1mA
Supplier Device PackageMini5-G1
Drive Voltage (Max Rds On, Min Rds On)4V
Vgs (Max)±15V
Drain to Source Voltage (Vdss)12 V

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