SK8603190L
MOSFET N-CH 30V 12A/19A 8HSOManufacturer: Panasonic Electronic Components
Categories: Single FETs, MOSFETs
Quality Control: Learn More
Panasonic Electronic Components SK8603190L is an N-Channel MOSFET designed for demanding applications. This component offers a 30V drain-to-source breakdown voltage (Vdss) and a continuous drain current (Id) of 12A at 25°C ambient temperature (Ta) and 19A at 25°C case temperature (Tc). Key performance metrics include a low on-resistance (Rds On) of 10mOhm maximum at 8A and 10V Vgs, and a typical gate charge (Qg) of 6.3 nC at 4.5V. The device features a maximum junction temperature of 150°C and supports power dissipation up to 2.7W (Ta) or 19W (Tc). Mounted via surface mount in an HSO8-F4-B package, this MOSFET is suitable for power management solutions in automotive and industrial sectors.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta), 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 8A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2.7W (Ta), 19W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 1.01mA |
| Supplier Device Package | HSO8-F4-B |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1092 pF @ 10 V |
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