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SK8603160L

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SK8603160L

MOSFET N-CH 30V 22A/70A 8HSO

Manufacturer: Panasonic Electronic Components

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Panasonic Electronic Components SK8603160L is an N-Channel MOSFET designed for efficient power switching applications. This component features a 30V drain-source voltage (Vdss) and offers a continuous drain current capability of 22A at ambient temperature (Ta) and 70A at case temperature (Tc). The device exhibits a low on-resistance (Rds On) of 3.3mOhm at 17A and 10V gate-source voltage. With a maximum junction temperature of 150°C, it provides a maximum power dissipation of 2.8W (Ta) and 28W (Tc). The SK8603160L is packaged in an HSO8-F4-B, an 8-lead surface mount configuration suitable for high-density boards. Key electrical characteristics include a gate charge (Qg) of 22 nC at 4.5V and input capacitance (Ciss) of 3920 pF at 10V. This MOSFET is utilized in various industries, including industrial automation and power management systems.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C22A (Ta), 70A (Tc)
Rds On (Max) @ Id, Vgs3.3mOhm @ 17A, 10V
FET Feature-
Power Dissipation (Max)2.8W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id3V @ 3.35mA
Supplier Device PackageHSO8-F4-B
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs22 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds3920 pF @ 10 V

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