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SK8603150L

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SK8603150L

MOSFET N-CH 30V 26A/89A 8HSO

Manufacturer: Panasonic Electronic Components

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Panasonic Electronic Components SK8603150L is an N-Channel Power MOSFET designed for demanding applications. This component features a 30V drain-to-source voltage (Vdss) and robust current handling capabilities, offering 26A continuous drain current at ambient temperature (Ta) and 89A at case temperature (Tc). Power dissipation is rated at 2.9W (Ta) and 34W (Tc). The device exhibits a low on-resistance of 2.5mOhm at 20A and 10V Vgs. Key electrical characteristics include a maximum gate charge (Qg) of 28 nC at 4.5V Vgs and input capacitance (Ciss) of 5180 pF at 10V Vds. The SK8603150L is packaged in an 8-PowerSMD, Flat Leads (HSO8-F4-B) for surface mounting, operating up to a junction temperature of 150°C. This MOSFET is suitable for use in power management, automotive, and industrial motor control applications.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C26A (Ta), 89A (Tc)
Rds On (Max) @ Id, Vgs2.5mOhm @ 20A, 10V
FET Feature-
Power Dissipation (Max)2.9W (Ta), 34W (Tc)
Vgs(th) (Max) @ Id3V @ 4.38mA
Supplier Device PackageHSO8-F4-B
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs28 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds5180 pF @ 10 V

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