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SK8603140L

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SK8603140L

MOSFET N-CH 30V 25A 8HSO

Manufacturer: Panasonic Electronic Components

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Panasonic Electronic Components SK8603140L is an N-Channel MOSFET designed for demanding applications. This component features a 30V drain-source breakdown voltage and a continuous drain current capability of 25A at ambient temperature (Ta) and 103A at case temperature (Tc). The low on-resistance specified is 2.2mOhm at 23A and 10V gate-source voltage (Vgs). Power dissipation is rated at 2.5W (Ta) and 40W (Tc). It is housed in an HSO8-F4-B package, suitable for surface mounting. Key electrical parameters include a gate charge (Qg) of 37 nC at 4.5V and input capacitance (Ciss) of 6860 pF at 10V. The operating junction temperature is 150°C. This MOSFET technology is widely employed in power management, automotive systems, and industrial automation.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C25A (Ta), 103A (Tc)
Rds On (Max) @ Id, Vgs2.2mOhm @ 23A, 10V
FET Feature-
Power Dissipation (Max)2.5W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id3V @ 5.85mA
Supplier Device PackageHSO8-F4-B
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs37 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds6860 pF @ 10 V

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