SK8403190L
MOSFET N-CH 30V 10A 8HSSOManufacturer: Panasonic Electronic Components
Categories: Single FETs, MOSFETs
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Panasonic Electronic Components SK8403190L is an N-Channel MOSFET featuring a 30V drain-source voltage (Vdss) and a continuous drain current (Id) of 10A at 25°C ambient and 19A at 25°C case temperature. This device offers a low on-resistance (Rds On) of 10mOhm at 70A and 10V Vgs. The SK8403190L operates with a gate-source voltage (Vgs) range of ±20V and a threshold voltage (Vgs(th)) of 3V maximum at 1.01mA. Key capacitance parameters include input capacitance (Ciss) of 1092pF maximum at 10V Vds and gate charge (Qg) of 6.3nC maximum at 4.5V Vgs. With a maximum junction temperature of 150°C, it supports power dissipation of 2W ambient and 19W case. The component is housed in an HSSO8-F1-B package, a surface-mount 8-PowerSMD, Flat Leads configuration, provided in Tape & Reel (TR) packaging. This MOSFET is suitable for applications in automotive and industrial power management.
Additional Information
Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | 8-PowerSMD, Flat Leads |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 10A (Ta), 19A (Tc) |
| Rds On (Max) @ Id, Vgs | 10mOhm @ 70A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 2W (Ta), 19W (Tc) |
| Vgs(th) (Max) @ Id | 3V @ 1.01mA |
| Supplier Device Package | HSSO8-F1-B |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 30 V |
| Gate Charge (Qg) (Max) @ Vgs | 6.3 nC @ 4.5 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1092 pF @ 10 V |
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