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SK8403180L

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SK8403180L

MOSFET N-CH 30V 12A 8HSSO

Manufacturer: Panasonic Electronic Components

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Panasonic Electronic Components SK8403180L is an N-Channel Power MOSFET designed for demanding applications. This device features a 30V drain-source breakdown voltage and a continuous drain current capability of 12A at ambient temperature (25°C) and 39A at case temperature. With a low on-resistance of 7.1mOhm at 8.5A and 10V Vgs, it optimizes power efficiency. The MOSFET offers a maximum power dissipation of 2W (Ta) and 19W (Tc), supporting robust thermal management. Key parameters include a gate charge of 10nC at 4.5V and an input capacitance of 1680pF at 10V Vds. The HSSO8-F1-B package, a surface-mount 8-PowerSMD with flat leads, is supplied on tape and reel. This component is suitable for use in power management, automotive, and industrial control systems.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C12A (Ta), 39A (Tc)
Rds On (Max) @ Id, Vgs7.1mOhm @ 8.5A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta), 19W (Tc)
Vgs(th) (Max) @ Id3V @ 1.45mA
Supplier Device PackageHSSO8-F1-B
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs10 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds1680 pF @ 10 V

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