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SK8403170L

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SK8403170L

MOSFET N-CH 30V 16A 8HSSO

Manufacturer: Panasonic Electronic Components

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Panasonic Electronic Components SK8403170L is an N-Channel MOSFET designed for demanding applications. This component features a drain-source voltage (Vdss) of 30V and a continuous drain current (Id) of 16A at ambient temperature, increasing to 59A at case temperature. With a low on-resistance (Rds On) of 4.1mOhm at 12A and 10V, it minimizes conduction losses. The device offers a maximum power dissipation of 2W at ambient temperature and 24.6W at case temperature. Key electrical parameters include a gate charge (Qg) of 17 nC at 4.5V and input capacitance (Ciss) of 2940 pF at 10V. Operating at a maximum junction temperature of 150°C, this MOSFET is housed in an 8-HSSO8-F1-B package, suitable for surface mounting. It is commonly utilized in power management, automotive, and industrial control systems.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Datasheet:
Technical Details:
PackagingTape & Reel (TR)
Package / Case8-PowerSMD, Flat Leads
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C16A (Ta), 59A (Tc)
Rds On (Max) @ Id, Vgs4.1mOhm @ 12A, 10V
FET Feature-
Power Dissipation (Max)2W (Ta), 24.6W (Tc)
Vgs(th) (Max) @ Id3V @ 2.56mA
Supplier Device PackageHSSO8-F1-B
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)30 V
Gate Charge (Qg) (Max) @ Vgs17 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds2940 pF @ 10 V

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