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MTM232230L

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MTM232230L

MOSFET N-CH 20V 4.5A SMINI3-G1

Manufacturer: Panasonic Electronic Components

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Panasonic Electronic Components N-Channel MOSFET, part number MTM232230L, is designed for demanding applications. This device features a drain-source voltage (Vdss) of 20V and a continuous drain current (Id) of 4.5A at 25°C. The Rds(on) is specified at a maximum of 28mOhm at 1A and 4V Vgs. Operating with a gate-source voltage (Vgs) range up to ±10V, it offers flexible drive options. The threshold voltage (Vgs(th)) is a maximum of 1.3V at 1mA. This MOSFET has a maximum power dissipation (Pd) of 500mW (Ta) and an operating junction temperature of 150°C. It is housed in a SMini3-G1 package (SC-70, SOT-323) and supplied on tape and reel. The input capacitance (Ciss) is a maximum of 1200pF at 10V Vds. This component is suitable for use in industrial and consumer electronics markets.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseSC-70, SOT-323
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C4.5A (Ta)
Rds On (Max) @ Id, Vgs28mOhm @ 1A, 4V
FET Feature-
Power Dissipation (Max)500mW (Ta)
Vgs(th) (Max) @ Id1.3V @ 1mA
Supplier Device PackageSMini3-G1
Drive Voltage (Max Rds On, Min Rds On)2.5V, 4.5V
Vgs (Max)±10V
Drain to Source Voltage (Vdss)20 V
Input Capacitance (Ciss) (Max) @ Vds1200 pF @ 10 V

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