MTM231230L
MOSFET P-CH 20V 3A SMINI3-G1Manufacturer: Panasonic Electronic Components
Categories: Single FETs, MOSFETs
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Panasonic Electronic Components MTM231230L is a P-Channel MOSFET with a drain-source breakdown voltage of 20 V. This device offers a continuous drain current of 3A at 25°C with a maximum power dissipation of 500mW. The SMini3-G1 package facilitates surface mounting, suitable for applications within the automotive and industrial sectors. Key parameters include a maximum on-resistance of 55mOhm at 1A and 4V Vgs, and gate-source threshold voltage of 1.3V at 1mA. Drive voltages for optimal performance range from 2.5V to 4.5V. Input capacitance (Ciss) is specified at 1000 pF at 10V. The operating junction temperature range extends to 150°C.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | SC-70, SOT-323 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | P-Channel |
| Current - Continuous Drain (Id) @ 25°C | 3A (Ta) |
| Rds On (Max) @ Id, Vgs | 55mOhm @ 1A, 4V |
| FET Feature | - |
| Power Dissipation (Max) | 500mW (Ta) |
| Vgs(th) (Max) @ Id | 1.3V @ 1mA |
| Supplier Device Package | SMini3-G1 |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 4.5V |
| Vgs (Max) | ±10V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 10 V |
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