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FK4B01120L1

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FK4B01120L1

MOSFET N-CH 12V 3.9A ULGA004

Manufacturer: Panasonic Electronic Components

Categories: Single FETs, MOSFETs

Quality Control: Learn More

The Panasonic Electronic Components FK4B01120L1 is an N-Channel MOSFET designed for surface mount applications. This component features a drain-to-source voltage (Vdss) of 12 V and a continuous drain current (Id) of 3.9 A at 25°C (Ta). The device offers a maximum on-resistance (Rds On) of 24 mOhm at 1.5 A and 4.5 V gate-source voltage. Key electrical characteristics include a gate charge (Qg) of 7 nC maximum at 4.5 V and an input capacitance (Ciss) of 490 pF maximum at 10 V drain-source voltage. The FK4B01120L1 is supplied in a ULGA004-W-1010-RA01 package and operates within a temperature range of -40°C to 85°C (TA). This MOSFET is suitable for use in various electronic systems including consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case4-XFLGA, CSP
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 85°C (TA)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.9A (Ta)
Rds On (Max) @ Id, Vgs24mOhm @ 1.5A, 4.5V
FET Feature-
Power Dissipation (Max)370mW (Ta)
Vgs(th) (Max) @ Id1V @ 394µA
Supplier Device PackageULGA004-W-1010-RA01
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)12 V
Gate Charge (Qg) (Max) @ Vgs7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds490 pF @ 10 V

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