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FK4B01110L1

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FK4B01110L1

MOSFET N-CH 12V 2.3A ALGA004

Manufacturer: Panasonic Electronic Components

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Panasonic Electronic Components FK4B01110L1 is an N-Channel MOSFET designed for demanding applications. This device features a drain-source voltage (Vdss) of 12V and a continuous drain current (Id) of 2.3A at 25°C with a maximum power dissipation of 340mW. The low on-resistance, specified as 64mOhm at 1.5A and 4.5V Vgs, is achievable with gate drive voltages as low as 1.5V up to 4.5V. Key parameters include a gate charge (Qg) of 2.55 nC at 4.5V and input capacitance (Ciss) of 274 pF at 10V. Packaged in an ALGA004-W-0606-RA01 (4-XFLGA, CSP) and supplied on tape and reel, this MOSFET is suitable for surface mounting. Its operating temperature range is -40°C to 85°C. This component is utilized in various industries including consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case4-XFLGA, CSP
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 85°C (TA)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C2.3A (Ta)
Rds On (Max) @ Id, Vgs64mOhm @ 1.5A, 4.5V
FET Feature-
Power Dissipation (Max)340mW (Ta)
Vgs(th) (Max) @ Id1V @ 118µA
Supplier Device PackageALGA004-W-0606-RA01
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)12 V
Gate Charge (Qg) (Max) @ Vgs2.55 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds274 pF @ 10 V

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