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FK4B01100L1

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FK4B01100L1

MOSFET N-CH 12V 3.4A XLGA004

Manufacturer: Panasonic Electronic Components

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Panasonic Electronic Components FK4B01100L1 is an N-Channel MOSFET designed for surface mount applications. This component features a Drain-Source Voltage (Vdss) of 12 V and a continuous Drain Current (Id) of 3.4 A at 25°C (Ta), with a maximum power dissipation of 360 mW (Ta). The device exhibits a low on-resistance of 30 mOhm at 1.5 A and 4.5 V (Vgs). Key parameters include a Gate Charge (Qg) of 5.8 nC at 4.5 V and an input capacitance (Ciss) of 275 pF at 10 V. The operating temperature range is -40°C to 85°C. This MOSFET is supplied in a 4-XFLGA, CSP package, specifically the XLGA004-W-0808-RA01, and is available on tape and reel. Its characteristics make it suitable for applications in consumer electronics and industrial automation.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case4-XFLGA, CSP
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 85°C (TA)
TechnologyMOSFET (Metal Oxide)
FET TypeN-Channel
Current - Continuous Drain (Id) @ 25°C3.4A (Ta)
Rds On (Max) @ Id, Vgs30mOhm @ 1.5A, 4.5V
FET Feature-
Power Dissipation (Max)360mW (Ta)
Vgs(th) (Max) @ Id1V @ 236µA
Supplier Device PackageXLGA004-W-0808-RA01
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)12 V
Gate Charge (Qg) (Max) @ Vgs5.8 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds275 pF @ 10 V

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