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FJ4B01120L1

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FJ4B01120L1

MOSFET P-CH 12V 2.6A ULGA004

Manufacturer: Panasonic Electronic Components

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Panasonic Electronic Components FJ4B01120L1 is a P-Channel MOSFET designed for high-efficiency switching applications. This device features a drain-source voltage (Vdss) of 12V and a continuous drain current (Id) of 2.6A at 25°C. The low on-resistance of 51mOhm at 2A and 4.5V gate-source voltage, coupled with a gate charge (Qg) of 10.7 nC (max) at 4.5V, ensures minimal power loss during switching. The FJ4B01120L1 is housed in a compact ULGA004-W-1010-RA01 package, a 4-XFLGA, CSP type, suitable for space-constrained designs. Its surface mount capability and operational temperature range of -40°C to 85°C make it ideal for portable electronics, automotive systems, and power management solutions. The device offers a maximum power dissipation of 370mW (Ta).

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case4-XFLGA, CSP
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 85°C (TA)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C2.6A (Ta)
Rds On (Max) @ Id, Vgs51mOhm @ 2A, 4.5V
FET Feature-
Power Dissipation (Max)370mW (Ta)
Vgs(th) (Max) @ Id1V @ 2mA
Supplier Device PackageULGA004-W-1010-RA01
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)12 V
Gate Charge (Qg) (Max) @ Vgs10.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds814 pF @ 10 V

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