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FJ4B01110L1

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FJ4B01110L1

MOSFET P-CH 12V 1.4A ALGA004

Manufacturer: Panasonic Electronic Components

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Panasonic Electronic Components FJ4B01110L1 is a P-Channel MOSFET designed for efficient power switching applications. This component features a Drain-Source Voltage (Vdss) of 12 V and a continuous Drain current (Id) capability of 1.4A at 25°C (Ta). The device exhibits a maximum On-Resistance (Rds On) of 153mOhm at 700mA and 4.5V Vgs. Key parameters include a Gate Charge (Qg) of 3.3 nC at 4.5 V and an Input Capacitance (Ciss) of 226 pF at 10 V. The FJ4B01110L1 is housed in an ALGA004-W-0606-RA01 package, a 4-XFLGA, CSP, suitable for surface mounting. With a power dissipation of 340mW (Ta) and an operating temperature range of -40°C to 85°C, this MOSFET is well-suited for use in automotive and industrial electronics. It is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case4-XFLGA, CSP
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 85°C (TA)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C1.4A (Ta)
Rds On (Max) @ Id, Vgs153mOhm @ 700mA, 4.5V
FET Feature-
Power Dissipation (Max)340mW (Ta)
Vgs(th) (Max) @ Id1V @ 598µA
Supplier Device PackageALGA004-W-0606-RA01
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)12 V
Gate Charge (Qg) (Max) @ Vgs3.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds226 pF @ 10 V

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