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FJ4B01100L1

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FJ4B01100L1

MOSFET P-CH 12V 2.2A XLGA004

Manufacturer: Panasonic Electronic Components

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Panasonic Electronic Components FJ4B01100L1 is a P-Channel MOSFET in a 4-XFLGA, CSP package. This device features a Drain-to-Source Voltage (Vdss) of 12 V and a continuous drain current (Id) of 2.2 A at 25°C. The Rds On is specified at a maximum of 74 mOhm at 1.5 A, 4.5 V, with drive voltages ranging from 1.5 V to 4.5 V. Key parameters include a Gate Charge (Qg) of 7 nC at 4.5 V and an Input Capacitance (Ciss) of 459 pF at 10 V. The component has a maximum power dissipation of 360 mW. Operating temperature is rated from -40°C to 85°C. This device is commonly utilized in power management applications within the automotive and industrial sectors. It is supplied in Tape & Reel packaging.

Additional Information

Series: -RoHS Status: RoHS CompliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / Case4-XFLGA, CSP
Mounting TypeSurface Mount
Operating Temperature-40°C ~ 85°C (TA)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C2.2A (Ta)
Rds On (Max) @ Id, Vgs74mOhm @ 1.5A, 4.5V
FET Feature-
Power Dissipation (Max)360mW (Ta)
Vgs(th) (Max) @ Id1V @ 1.2mA
Supplier Device PackageXLGA004-W-0808-RA01
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4.5V
Vgs (Max)±8V
Drain to Source Voltage (Vdss)12 V
Gate Charge (Qg) (Max) @ Vgs7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds459 pF @ 10 V

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