2SK327700L
MOSFET N-CH 200V 2.5A U-G1Manufacturer: Panasonic Electronic Components
Categories: Single FETs, MOSFETs
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Panasonic Electronic Components' 2SK327700L is an N-Channel MOSFET designed for demanding applications. This component features a 200V drain-to-source voltage (Vdss) and a continuous drain current (Id) of 2.5A at 25°C (Tc). With a maximum on-resistance (Rds On) of 1.7 Ohms at 1.25A and 10V Vgs, it offers efficient switching characteristics. The device supports a gate-source voltage (Vgs) range of ±20V and has a threshold voltage (Vgs(th)) of 4V at 1mA. Its input capacitance (Ciss) is 170 pF at 20V Vds. The 2SK327700L is housed in a TO-252-3, DPAK (2 leads + tab), SC-63 package, suitable for surface mounting. It can dissipate up to 1W (Ta) or 10W (Tc) of power and operates at temperatures up to 150°C (TJ). This MOSFET finds application in power supply units, industrial control systems, and automotive electronics.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 2.5A (Tc) |
| Rds On (Max) @ Id, Vgs | 1.7Ohm @ 1.25A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta), 10W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | U-G1 |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 170 pF @ 20 V |
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