2SK326800L
MOSFET N-CH 100V 15A U-DLManufacturer: Panasonic Electronic Components
Categories: Single FETs, MOSFETs
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Panasonic Electronic Components' N-channel MOSFET, part number 2SK326800L, offers a 100V drain-source voltage capability. This device is designed for surface mounting in the U-DL package (TO-252-4, DPAK) and supports a continuous drain current of 15A at 25°C (Tc). Key performance characteristics include a maximum Rds On of 100mOhm at 12A and 10V Vgs, with a gate-source breakdown voltage of ±20V. The input capacitance (Ciss) is rated at 960pF at 10V. Power dissipation is specified as 1W (Ta) and 20W (Tc). This MOSFET is suitable for applications in power management and switching circuits across various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Reel (TR) |
| Package / Case | TO-252-4, DPAK (3 Leads + Tab) |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| Technology | MOSFET (Metal Oxide) |
| FET Type | N-Channel |
| Current - Continuous Drain (Id) @ 25°C | 15A (Tc) |
| Rds On (Max) @ Id, Vgs | 100mOhm @ 12A, 10V |
| FET Feature | - |
| Power Dissipation (Max) | 1W (Ta), 20W (Tc) |
| Vgs(th) (Max) @ Id | 4V @ 1mA |
| Supplier Device Package | U-DL |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Vgs (Max) | ±20V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 960 pF @ 10 V |
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