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2SJ058200L

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2SJ058200L

MOSFET P-CH 200V 2A U-G2

Manufacturer: Panasonic Electronic Components

Categories: Single FETs, MOSFETs

Quality Control: Learn More

Panasonic Electronic Components P-Channel MOSFET, part number 2SJ058200L, offers a 200V drain-source voltage rating and a continuous drain current of 2A at 25°C (Tc). This device features a maximum on-resistance of 2 Ohms at 1A drain current and 10V gate-source voltage. The input capacitance (Ciss) is rated at 400 pF maximum at 20V drain-source voltage. With a maximum junction temperature of 150°C, the 2SJ058200L dissipates up to 1W in free air (Ta) and 10W when mounted on a heatsink (Tc). The MOSFET is housed in a TO-252-3, DPAK (2 leads + tab), SC-63 package, also identified as U-G2, and is supplied on tape and reel. This component is suitable for applications in power management and general-purpose switching.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Reel (TR)
Technical Details:
PackagingTape & Reel (TR)
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Mounting TypeSurface Mount
Operating Temperature150°C (TJ)
TechnologyMOSFET (Metal Oxide)
FET TypeP-Channel
Current - Continuous Drain (Id) @ 25°C2A (Tc)
Rds On (Max) @ Id, Vgs2Ohm @ 1A, 10V
FET Feature-
Power Dissipation (Max)1W (Ta), 10W (Tc)
Vgs(th) (Max) @ Id4V @ 1mA
Supplier Device PackageU-G2
Drive Voltage (Max Rds On, Min Rds On)10V
Vgs (Max)±20V
Drain to Source Voltage (Vdss)200 V
Input Capacitance (Ciss) (Max) @ Vds400 pF @ 20 V

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