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2SD24790RA

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2SD24790RA

TRANS NPN DARL 100V 2A MT-3

Manufacturer: Panasonic Electronic Components

Categories: Single Bipolar Transistors

Quality Control: Learn More

Panasonic Electronic Components Bipolar Transistor, NPN, Darlington configuration. This device features a collector-emitter breakdown voltage of 100 V and a continuous collector current handling capability of 2 A. With a minimum DC current gain (hFE) of 8000 at 1A and 10V, it offers significant amplification. The transition frequency is 150 MHz. This component is designed for through-hole mounting in a 3-SIP package, specifically MT-3-A1, supplied in Tape & Box. Maximum power dissipation is 1.5 W, with an operating junction temperature of 150°C. Collector cutoff current (ICBO) is a maximum of 100 nA. Applications include power switching and amplification circuits across various industrial sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)
Technical Details:
PackagingTape & Box (TB)
Package / Case3-SIP
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.5V @ 1mA, 1A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce8000 @ 1A, 10V
Frequency - Transition150MHz
Supplier Device PackageMT-3-A1
Current - Collector (Ic) (Max)2 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max1.5 W

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