2SD11990S
TRANS NPN 40V 0.05A M TYPEManufacturer: Panasonic Electronic Components
Categories: Single Bipolar Transistors
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Panasonic Electronic Components' 2SD11990S is an NPN bipolar junction transistor (BJT) designed for general-purpose switching and amplification applications. This through-hole component features a maximum collector current (Ic) of 50 mA and a collector-emitter breakdown voltage (Vce) of 40 V. With a transition frequency (fT) of 120 MHz, it is suitable for moderate frequency operations. The device exhibits a minimum DC current gain (hFE) of 600 at 2 mA and 10 V, and a maximum Vce(sat) of 200 mV at 1 mA and 10 mA. The 2SD11990S has a maximum power dissipation of 400 mW and an operating junction temperature of 150°C. It is supplied in the M-A1 (3-SIP) package, available in bulk packaging. This transistor finds utility in consumer electronics and industrial control systems.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | 3-SIP |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 200mV @ 1mA, 10mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 600 @ 2mA, 10V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | M-A1 |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 40 V |
| Power - Max | 400 mW |
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