2SD09650RA
TRANS NPN 20V 5A TO92-B1Manufacturer: Panasonic Electronic Components
Categories: Single Bipolar Transistors
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Panasonic Electronic Components NPN Bipolar Junction Transistor (BJT). This component features a collector current (Ic) capability of 5A and a collector-emitter breakdown voltage (Vce(max)) of 20V. With a transition frequency (fT) of 150MHz, it is suitable for applications requiring moderate switching speeds. The DC current gain (hFE) is specified at a minimum of 340 at 500mA and 2V. The device offers a maximum power dissipation of 750 mW and operates at junction temperatures up to 150°C. It is supplied in a TO-92-B1 package for through-hole mounting and is available in Tape & Box packaging. This transistor is commonly utilized in automotive and industrial control systems.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 100mA, 3A |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 340 @ 500mA, 2V |
| Frequency - Transition | 150MHz |
| Supplier Device Package | TO-92-B1 |
| Current - Collector (Ic) (Max) | 5 A |
| Voltage - Collector Emitter Breakdown (Max) | 20 V |
| Power - Max | 750 mW |
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