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2SD0946B

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2SD0946B

TRANS NPN DARL 80V 1A TO126B-A1

Manufacturer: Panasonic Electronic Components

Categories: Single Bipolar Transistors

Quality Control: Learn More

Panasonic Electronic Components 2SD0946B is an NPN Darlington bipolar junction transistor (BJT) designed for power switching and amplification applications. This device features a maximum collector-emitter breakdown voltage of 80 V and a continuous collector current capability of 1 A. The high DC current gain, specified as a minimum of 4000 at 1A and 10V, combined with a transition frequency of 150 MHz, enables efficient signal amplification and switching. Power dissipation is rated at 1.2 W, and the transistor exhibits a Vce(sat) of 1.8V at 1mA/1A. The TO-126B-A1 package facilitates through-hole mounting, and the component operates at temperatures up to 150°C. This transistor is commonly utilized in industrial control systems, power supplies, and lighting control circuits.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN - Darlington
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.8V @ 1mA, 1A
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce4000 @ 1A, 10V
Frequency - Transition150MHz
Supplier Device PackageTO-126B-A1
Current - Collector (Ic) (Max)1 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max1.2 W

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