2SD0592ARA
TRANS NPN 50V 1A TO92-B1Manufacturer: Panasonic Electronic Components
Categories: Single Bipolar Transistors
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Panasonic Electronic Components' 2SD0592ARA is a high-performance NPN bipolar junction transistor designed for demanding applications. This through-hole component, housed in a TO-92-B1 package, offers a 50V collector-emitter breakdown voltage and a maximum collector current of 1A. It features a transition frequency of 200MHz and a power dissipation rating of 750mW. The 2SD0592ARA exhibits a minimum DC current gain (hFE) of 120 at 500mA and 10V, with a Vce saturation of 400mV at 50mA and 500mA. Its low collector cutoff current is 100nA (ICBO). Operating at temperatures up to 150°C, this device is suitable for use in industrial, automotive, and consumer electronics sectors. The component is supplied in a cut tape (CT) package.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 500mA, 10V |
| Frequency - Transition | 200MHz |
| Supplier Device Package | TO-92-B1 |
| Current - Collector (Ic) (Max) | 1 A |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 750 mW |
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