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2SC26310RA

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2SC26310RA

TRANS NPN 150V 0.05A TO92-B1

Manufacturer: Panasonic Electronic Components

Categories: Single Bipolar Transistors

Quality Control: Learn More

Panasonic Electronic Components NPN Bipolar Junction Transistor (BJT), part number 2SC26310RA. This device offers a 150V collector-emitter breakdown voltage and a maximum collector current of 50mA. Featuring a transition frequency of 160MHz and a power dissipation of 750mW, the 2SC26310RA is suitable for general-purpose amplification and switching applications. Key parameters include a minimum DC current gain (hFE) of 130 at 10mA and 5V, and a Vce saturation of 1V maximum at 3mA and 30mA. The transistor is housed in a TO-92-B1 package with formed leads, designed for through-hole mounting. This component is typically utilized in consumer electronics and industrial control systems. It is supplied in Cut Tape (CT) packaging.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)
Technical Details:
PackagingCut Tape (CT)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1V @ 3mA, 30mA
Current - Collector Cutoff (Max)1µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce130 @ 10mA, 5V
Frequency - Transition160MHz
Supplier Device PackageTO-92-B1
Current - Collector (Ic) (Max)50 mA
Voltage - Collector Emitter Breakdown (Max)150 V
Power - Max750 mW

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