2SC26310RA
TRANS NPN 150V 0.05A TO92-B1Manufacturer: Panasonic Electronic Components
Categories: Single Bipolar Transistors
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Panasonic Electronic Components NPN Bipolar Junction Transistor (BJT), part number 2SC26310RA. This device offers a 150V collector-emitter breakdown voltage and a maximum collector current of 50mA. Featuring a transition frequency of 160MHz and a power dissipation of 750mW, the 2SC26310RA is suitable for general-purpose amplification and switching applications. Key parameters include a minimum DC current gain (hFE) of 130 at 10mA and 5V, and a Vce saturation of 1V maximum at 3mA and 30mA. The transistor is housed in a TO-92-B1 package with formed leads, designed for through-hole mounting. This component is typically utilized in consumer electronics and industrial control systems. It is supplied in Cut Tape (CT) packaging.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)Download Free CAD Model:
Technical Details:
| Packaging | Cut Tape (CT) |
| Package / Case | TO-226-3, TO-92-3 (TO-226AA) Formed Leads |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 1V @ 3mA, 30mA |
| Current - Collector Cutoff (Max) | 1µA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 130 @ 10mA, 5V |
| Frequency - Transition | 160MHz |
| Supplier Device Package | TO-92-B1 |
| Current - Collector (Ic) (Max) | 50 mA |
| Voltage - Collector Emitter Breakdown (Max) | 150 V |
| Power - Max | 750 mW |
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