2SC15670R
TRANS NPN 100V 0.5A TO126B-A1Manufacturer: Panasonic Electronic Components
Categories: Single Bipolar Transistors
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Panasonic Electronic Components 2SC15670R is an NPN bipolar junction transistor (BJT) designed for through-hole mounting within a TO-126B-A1 package. This device offers a collector-emitter breakdown voltage of 100 V and a continuous collector current capability of 500 mA. With a maximum power dissipation of 1.2 W and an operating junction temperature up to 150°C, it is suitable for applications requiring robust performance. The transistor exhibits a minimum DC current gain (hFE) of 130 at 150 mA and 10 V, with a transition frequency of 120 MHz. The Vce(sat) is specified at a maximum of 400 mV for an IB of 50 mA and IC of 500 mA. This component finds application in various industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: BulkDownload Free CAD Model:
Technical Details:
| Packaging | Bulk |
| Package / Case | TO-225AA, TO-126-3 |
| Mounting Type | Through Hole |
| Transistor Type | NPN |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 400mV @ 50mA, 500mA |
| Current - Collector Cutoff (Max) | - |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 130 @ 150mA, 10V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | TO-126B-A1 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 100 V |
| Power - Max | 1.2 W |