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2SC15670R

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2SC15670R

TRANS NPN 100V 0.5A TO126B-A1

Manufacturer: Panasonic Electronic Components

Categories: Single Bipolar Transistors

Quality Control: Learn More

Panasonic Electronic Components 2SC15670R is an NPN bipolar junction transistor (BJT) designed for through-hole mounting within a TO-126B-A1 package. This device offers a collector-emitter breakdown voltage of 100 V and a continuous collector current capability of 500 mA. With a maximum power dissipation of 1.2 W and an operating junction temperature up to 150°C, it is suitable for applications requiring robust performance. The transistor exhibits a minimum DC current gain (hFE) of 130 at 150 mA and 10 V, with a transition frequency of 120 MHz. The Vce(sat) is specified at a maximum of 400 mV for an IB of 50 mA and IC of 500 mA. This component finds application in various industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-225AA, TO-126-3
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic400mV @ 50mA, 500mA
Current - Collector Cutoff (Max)-
DC Current Gain (hFE) (Min) @ Ic, Vce130 @ 150mA, 10V
Frequency - Transition120MHz
Supplier Device PackageTO-126B-A1
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max1.2 W

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