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2SC14730RA

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2SC14730RA

TRANS NPN 200V 0.07A TO92-B1

Manufacturer: Panasonic Electronic Components

Categories: Single Bipolar Transistors

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Panasonic Electronic Components NPN Bipolar Junction Transistor, part number 2SC14730RA. This device offers a 200V collector-emitter breakdown voltage and a maximum collector current of 70mA. Featuring a transition frequency of 80MHz and a power dissipation of 750mW, it is suitable for applications requiring moderate signal amplification and switching. The minimum DC current gain (hFE) is 100 at 5mA collector current and 10V collector-emitter voltage. The saturation voltage is specified at 1.2V maximum for 5mA base current and 50mA collector current. This transistor is housed in a TO-92-B1 package with formed leads, designed for through-hole mounting. It is supplied in Tape & Box packaging and operates within an ambient temperature range up to 150°C. Common applications include general-purpose amplification and switching in consumer electronics and industrial control systems.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)
Technical Details:
PackagingTape & Box (TB)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.2V @ 5mA, 50mA
Current - Collector Cutoff (Max)1µA
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 5mA, 10V
Frequency - Transition80MHz
Supplier Device PackageTO-92-B1
Current - Collector (Ic) (Max)70 mA
Voltage - Collector Emitter Breakdown (Max)200 V
Power - Max750 mW

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