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2SC1318ARA

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2SC1318ARA

TRANS NPN 70V 0.5A TO92-B1

Manufacturer: Panasonic Electronic Components

Categories: Single Bipolar Transistors

Quality Control: Learn More

Panasonic Electronic Components NPN Bipolar Junction Transistor, part number 2SC1318ARA. This through-hole device features a 70V collector-emitter breakdown voltage and a maximum collector current of 500mA. It offers a DC current gain (hFE) of at least 120 at 150mA and 10V, with a transition frequency of 120MHz. The transistor is rated for a maximum power dissipation of 750mW and operates up to a junction temperature of 150°C. Saturation voltage is specified at 600mV maximum for 30mA base current and 300mA collector current. The TO-92-B1 package is supplied in cut tape. Applications include general-purpose amplification and switching circuits within industrial and consumer electronics.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Cut Tape (CT)
Technical Details:
PackagingCut Tape (CT)
Package / CaseTO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting TypeThrough Hole
Transistor TypeNPN
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic600mV @ 30mA, 300mA
Current - Collector Cutoff (Max)100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 150mA, 10V
Frequency - Transition120MHz
Supplier Device PackageTO-92-B1
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)70 V
Power - Max750 mW

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