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2SB1417APA

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2SB1417APA

TRANS PNP 80V 3A MT-4

Manufacturer: Panasonic Electronic Components

Categories: Single Bipolar Transistors

Quality Control: Learn More

Panasonic Electronic Components 2SB1417APA is a PNP bipolar junction transistor (BJT) designed for through-hole mounting in an MT-4-A1 package. This component offers a collector-emitter breakdown voltage of 80 V and a continuous collector current capability of up to 3 A. The transistor exhibits a minimum DC current gain (hFE) of 120 at 1 A collector current and 4 V collector-emitter voltage, with a transition frequency of 30 MHz. Maximum power dissipation is rated at 2 W, and it operates within a junction temperature range of 150°C. Vce saturation is specified at a maximum of 1.2 V for an Ib of 375 mA and Ic of 3 A. This component is suitable for applications in industrial automation and power management systems. It is supplied in Tape & Box packaging.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)
Technical Details:
PackagingTape & Box (TB)
Package / Case3-SIP
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic1.2V @ 375mA, 3A
Current - Collector Cutoff (Max)100µA
DC Current Gain (hFE) (Min) @ Ic, Vce120 @ 1A, 4V
Frequency - Transition30MHz
Supplier Device PackageMT-4-A1
Current - Collector (Ic) (Max)3 A
Voltage - Collector Emitter Breakdown (Max)80 V
Power - Max2 W

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