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2SB10630P

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2SB10630P

TRANS PNP 100V 5A TO220F-A1

Manufacturer: Panasonic Electronic Components

Categories: Single Bipolar Transistors

Quality Control: Learn More

Panasonic Electronic Components 2SB10630P is a PNP Bipolar Junction Transistor (BJT) designed for through-hole mounting in a TO-220F-A1 package. This device offers a collector-emitter breakdown voltage of 100V and a maximum continuous collector current of 5A. With a power dissipation rating of 2W and a transition frequency of 20MHz, it is suitable for applications requiring moderate power handling and switching speeds. The datasheet specifies a minimum DC current gain (hFE) of 100 at 1A and 5V, and a saturation voltage (Vce) of 2V at 300mA and 3A. The maximum collector cutoff current (ICBO) is 50µA. This component is utilized in various industrial and consumer electronics applications.

Additional Information

Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Bulk
Technical Details:
PackagingBulk
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic2V @ 300mA, 3A
Current - Collector Cutoff (Max)50µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce100 @ 1A, 5V
Frequency - Transition20MHz
Supplier Device PackageTO-220F-A1
Current - Collector (Ic) (Max)5 A
Voltage - Collector Emitter Breakdown (Max)100 V
Power - Max2 W

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