2SB1030ARA
TRANS PNP 50V 0.5A NS-B1Manufacturer: Panasonic Electronic Components
Categories: Single Bipolar Transistors
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Panasonic Electronic Components 2SB1030ARA is a PNP bipolar junction transistor. This through-hole device offers a collector-emitter breakdown voltage of 50V and a continuous collector current capability of 500mA. With a transition frequency of 120MHz, it is suitable for applications requiring moderate signal amplification at higher frequencies. The transistor exhibits a minimum DC current gain (hFE) of 120 at 150mA and 10V. Maximum power dissipation is rated at 300mW, and the operating junction temperature can reach 150°C. The NS-B1 package, a 3-SIP, is supplied in Tape & Box packaging. This component finds utility in various industrial and consumer electronics, including power control and signal switching circuits.
Additional Information
Series: -RoHS Status: unknownManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | 3-SIP |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 30mA, 300mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 120 @ 150mA, 10V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | NS-B1 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 300 mW |