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2SB1030A

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2SB1030A

TRANS PNP 50V 0.5A NS-B1

Manufacturer: Panasonic Electronic Components

Categories: Single Bipolar Transistors

Quality Control: Learn More

Panasonic Electronic Components PNP Bipolar Junction Transistor (BJT), part number 2SB1030A. This through-hole component features a 50V collector-emitter breakdown voltage and a maximum collector current of 500mA. It offers a minimum DC current gain (hFE) of 85 at 150mA and 10V, with a transition frequency of 120MHz. The device has a maximum power dissipation of 300mW and an operating junction temperature of 150°C. Saturation voltage (Vce Sat) is specified at 600mV maximum for 30mA base current and 300mA collector current. The collector cutoff current (Ic) is a maximum of 1µA. The supplier device package is NS-B1, a 3-SIP form factor, supplied in Tape & Box (TB) packaging. This component is suitable for applications in general-purpose amplification and switching circuits within the industrial and consumer electronics sectors.

Additional Information

Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)
Technical Details:
PackagingTape & Box (TB)
Package / Case3-SIP
Mounting TypeThrough Hole
Transistor TypePNP
Operating Temperature150°C (TJ)
Vce Saturation (Max) @ Ib, Ic600mV @ 30mA, 300mA
Current - Collector Cutoff (Max)1µA
DC Current Gain (hFE) (Min) @ Ic, Vce85 @ 150mA, 10V
Frequency - Transition120MHz
Supplier Device PackageNS-B1
Current - Collector (Ic) (Max)500 mA
Voltage - Collector Emitter Breakdown (Max)50 V
Power - Max300 mW

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