2SB1030A
TRANS PNP 50V 0.5A NS-B1Manufacturer: Panasonic Electronic Components
Categories: Single Bipolar Transistors
Quality Control: Learn More
Panasonic Electronic Components PNP Bipolar Junction Transistor (BJT), part number 2SB1030A. This through-hole component features a 50V collector-emitter breakdown voltage and a maximum collector current of 500mA. It offers a minimum DC current gain (hFE) of 85 at 150mA and 10V, with a transition frequency of 120MHz. The device has a maximum power dissipation of 300mW and an operating junction temperature of 150°C. Saturation voltage (Vce Sat) is specified at 600mV maximum for 30mA base current and 300mA collector current. The collector cutoff current (Ic) is a maximum of 1µA. The supplier device package is NS-B1, a 3-SIP form factor, supplied in Tape & Box (TB) packaging. This component is suitable for applications in general-purpose amplification and switching circuits within the industrial and consumer electronics sectors.
Additional Information
Series: -RoHS Status: RoHS non-compliantManufacturer Lead Time: No lead time information availableProduct Status: ObsoletePackaging: Tape & Box (TB)Download Free CAD Model:
Technical Details:
| Packaging | Tape & Box (TB) |
| Package / Case | 3-SIP |
| Mounting Type | Through Hole |
| Transistor Type | PNP |
| Operating Temperature | 150°C (TJ) |
| Vce Saturation (Max) @ Ib, Ic | 600mV @ 30mA, 300mA |
| Current - Collector Cutoff (Max) | 1µA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 85 @ 150mA, 10V |
| Frequency - Transition | 120MHz |
| Supplier Device Package | NS-B1 |
| Current - Collector (Ic) (Max) | 500 mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Power - Max | 300 mW |
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